Pars Electronics

We deal in all kind's of semiconductor devices like IGBT Modules, IPM Modules, SCR Diode, IC, Capacitor, Make infinion, eupac, semikron, Mistibushi, IXYS,Epcos, Sarda etc

Additional Information:

• Delivery Time: AS PER REQUIRED
• Packaging Details: GOOD PACKING

Additional Information:

• Pay Mode Terms: T/T (Bank Transfer),Other
• Delivery Time: AS PER REQUIREMENT
• Packaging Details: GOOD PACKING

Features:-

• Homogeneous Si
• NPT-IGBT
• V_CE(sat) with positive temperature coefficient
• High short circuit capability, self limiting to 6 x I_C

We deal in all kind''s of semiconductor devices like IGBT Modules, IPM Modules, SCR Diode, IC, Capacitor, LCD Panel Make infinion, eupac, semikron, Mistibushi, IXYS,Epcos, Sarda, Sharp, Hitachi,Toshiba NLC etc
Regards
Sunil Kumar
Pars Electronics

Additional Information:

• Pay Mode Terms: T/T (Bank Transfer)
• Delivery Time: As Per Requirement
• Packaging Details: GOOD PACKING

Features • High Safe Operating Area • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* • Complementary to MJ15023 (PNP), MJ15025 (PNP)

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• Pay Mode Terms: T/T (Bank Transfer),Other
• Delivery Time: AS PER REQUIREMENT
• Packaging Details: GOOD PACKING

• High collector voltage: VCEO = 230 V (min)
• Complementary to TTA1943
• Recommended for 100-W high-fidelity audio frequency amplifier output stage. 

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• Pay Mode Terms: T/T (Bank Transfer),Other
• Delivery Time: AS PER REQUIREMENT
• Packaging Details: GOOD PACKING

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility

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• Pay Mode Terms: T/T (Bank Transfer),Other
• Delivery Time: AS PER REQUIRMENT
• Packaging Details: GOOD PACKING

Benefits

• Increased ruggedness
• Wide availability from distribution partners
• Industry standard qualification
• High performance in low frequency applications

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• Pay Mode Terms: T/T (Bank Transfer),Other
• Delivery Time: as per requirment
• Packaging Details: good packing

Benefits

• Standard pinout allows for drop in replacement
• High-current carrying capability package
• Industry standard qualification level
• High performance in low frequency applications
• Increased power density

Additional Information:

• Pay Mode Terms: T/T (Bank Transfer),Other
• Delivery Time: AS PER REQUIRMENT
• Packaging Details: GOOD PACKING

Additional Information:

• Pay Mode Terms: T/T (Bank Transfer),Other
• Delivery Time: AS PER REQUIRMENT
• Packaging Details: GOOD PACKING

Features:

• High Voltage :-  Vcbo =1700v
• Low Saturation Voltage:- Vce(sat) =3V(Max)
• High Speed:- tf(2) = 0.1 us(Typ.)

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• Pay Mode Terms: T/T (Bank Transfer),Other
• Delivery Time: AS PER REQUIREMENT
• Packaging Details: GOOD PACKING

Features

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-247AC package

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• Pay Mode Terms: T/T (Bank Transfer),Other
• Delivery Time: AS PER REQUIRMENT
• Packaging Details: GOOD PACKING

NPN TRANSISTOR
2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Unit: mm l High Voltage l Low Saturation Voltage l High Speed : VCBO = 1700 V : VCE (sat) = 3 V (Max.) : tf (2) = 0.1 µs (Typ.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltag.

Additional Information:

• Delivery Time: READY STOCK
• Packaging Details: VERY GOOD

• High collector voltage: VCEO = -230 V (min)
• Complementary to TTC5200
• Recommended for 100-W high-fidelity audio frequency amplifier output stage.

Additional Information:

• Pay Mode Terms: T/T (Bank Transfer),Other
• Delivery Time: AS PER REQUIRMENT
• Packaging Details: GOOD PACKING

We deal in all kind's of semiconductor devices like IGBT Modules, IPM Modules, SCR Diode, IC, Capacitor, Make infinion, eupac, semikron, Mistibushi, IXYS,Epcos, Sarda etc

Additional Information:

• Delivery Time: AS PER REQUIRED
• Packaging Details: GOOD PACKING

Features:-

• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance:  Yfs = 7.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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• Pay Mode Terms: T/T (Bank Transfer),Other
• Delivery Time: AS PER RQUIREMENT
• Packaging Details: GOOD PACKING

Features:-
International standard package
Planar passivated chips
Very short recovery time
Soft recovery behaviour

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• Pay Mode Terms: T/T (Bank Transfer),Other
• Delivery Time: as per requirement
• Packaging Details: GOOD PACKING

These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT i. NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effect.

Additional Information:

• Delivery Time: READY STOCK
• Packaging Details: VERY GOOD